دیتاشیت UMT1N
مشخصات دیتاشیت
| نام دیتاشیت |
UMT1N
|
| حجم فایل |
40.619
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
5
|
مشخصات فنی
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
Yangzhou Yangjie Elec Tech UMT1N
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Transistor Type:
2PCSPNP
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Operating Temperature:
-55°C~+150°C@(Tj)
-
Collector Current (Ic):
150mA
-
Power Dissipation (Pd):
250mW
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Transition Frequency (fT):
140MHz
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DC Current Gain (hFE@Ic,Vce):
120@1mA,6V
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Collector Cut-Off Current (Icbo):
100nA
-
Collector-Emitter Breakdown Voltage (Vceo):
50V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
500mV@50mA,5mA
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Package:
SOT-323-6
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Manufacturer:
Yangzhou Yangjie Elec Tech
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Part id:
88085
