IKZ50N65ES5 دیتاشیت

IKZ50N65ES5

مشخصات دیتاشیت

نام دیتاشیت IKZ50N65ES5
حجم فایل 70.168 کیلوبایت
نوع فایل pdf
تعداد صفحات 16

مشاهده دیتاشیت IKZ50N65ES5

دانلود دیتاشیت

سایر مستندات

IKZ50N65ES5 16 pages

مشخصات فنی

  • RoHS: true
  • Type: -
  • Category: Triode/MOS Tube/Transistor/IGBTs
  • Datasheet: Infineon Technologies IKZ50N65ES5
  • Operating Temperature: -40°C~+175°C@(Tj)
  • Collector Current (Ic): 80A
  • Power Dissipation (Pd): 274W
  • Turn?on Delay Time (Td(on)): 36ns
  • Input Capacitance (Cies@Vce): 3.1nF@25V
  • Turn?on Switching Loss (Eon): 0.77mJ
  • Diode Forward Voltage (Vf@If): 1.45V@50A
  • Total Gate Charge (Qg@Ic,Vge): 120nC@50A,15V
  • Turn?off Delay Time (Td(off)): 294ns
  • Pulsed Collector Current (Icm): 200A
  • Turn?off Switching Loss (Eoff): 0.88mJ
  • Diode Reverse Recovery Time (Trr): 62ns
  • Collector Cut-Off Current (Ices@Vce): 50uA@650V
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 4V@500uA
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge): 1.35V@50A,15V
  • Package: TO-247-4
  • Manufacturer: Infineon Technologies
  • Part id: 1044461

محصولات مشابه