UT3N06G-AE3-R 数据手册
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技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: UTC(Unisonic Tech) UT3N06G-AE3-R
- Power Dissipation (Pd): 350mW
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 3A
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 90mΩ@10V,3A
- Package: SOT-23
- Manufacturer: UTC(Unisonic Tech)
- Part id: 751835
