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IPG20N06S4L-26 Datasheet
Datasheet specifications
| Datasheet's name | IPG20N06S4L-26 |
|---|---|
| File size | 62.532 KB |
| File type | |
| Number of pages | 9 |
Download Datasheet IPG20N06S4L-26 |
Download Datasheet |
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Other documentations
B78308-A2387-A003 20 pages
Technical specifications
- RoHS: true
- Type: 2 N-Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Infineon Technologies IPG20N06S4L-26
- Power Dissipation (Pd): 33W
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 20A
- Gate Threshold Voltage (Vgs(th)@Id): 2.2V@10uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 26mΩ@10V,17A
- Package: TDSON-8-4
- Manufacturer: Infineon Technologies
- Part id: 1422265
