دیتاشیت SI1032R-T1-GE3
مشخصات دیتاشیت
| نام دیتاشیت |
SI1032R-T1-GE3
|
| حجم فایل |
204.216
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
9
|
مشخصات
-
RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Vishay Intertech SI1032R-T1-GE3
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
250mW
-
Total Gate Charge (Qg@Vgs):
0.75nC@4.5V
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Drain Source Voltage (Vdss):
20V
-
Continuous Drain Current (Id):
140mA
-
Gate Threshold Voltage (Vgs(th)@Id):
1.2V@250uA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
5Ω@4.5V,200mA
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Package:
SC-75A
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Manufacturer:
Vishay Intertech
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Part id:
441912
