دیتاشیت CSD19536KTT
مشخصات دیتاشیت
| نام دیتاشیت |
CSD19536KTT
|
| حجم فایل |
873.414
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
14
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
Texas Instruments CSD19536KTT
-
Operating Temperature:
-55°C~+175°C@(Tj)
-
Power Dissipation (Pd):
375W
-
Total Gate Charge (Qg@Vgs):
153nC@10V
-
Drain Source Voltage (Vdss):
100V
-
Input Capacitance (Ciss@Vds):
12000pF@50V
-
Continuous Drain Current (Id):
200A
-
Gate Threshold Voltage (Vgs(th)@Id):
3.2V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
2.4mΩ@100A,10V
-
Package:
TO-263-3
-
Manufacturer:
Texas Instruments
-
Part id:
736467
