دیتاشیت 2SB1386
مشخصات دیتاشیت
| نام دیتاشیت |
2SB1386
|
| حجم فایل |
205.734
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
5
|
مشخصات
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
Jiangsu Changjing Electronics Technology Co., Ltd. 2SB1386
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Transistor Type:
PNP
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
5A
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Power Dissipation (Pd):
500mW
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Transition Frequency (fT):
120MHz
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DC Current Gain (hFE@Ic,Vce):
180@500mA,2V
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Collector Cut-Off Current (Icbo):
500nA
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Collector-Emitter Breakdown Voltage (Vceo):
20V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
1V@4A,100mA
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Package:
SOT-89-3
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Manufacturer:
Jiangsu Changjing Electronics Technology Co., Ltd.
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Part id:
172861
