دیتاشیت STGD6NC60HDT4
مشخصات دیتاشیت
نام دیتاشیت |
STGD6NC60HDT4
|
حجم فایل |
232.946
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
9
|
مشخصات
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RoHS:
true
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Type:
-
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Category:
Triode/MOS Tube/Transistor/IGBTs
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Datasheet:
STMicroelectronics STGD6NC60HDT4
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Operating Temperature:
-55°C~+150°C@(Tj)
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Collector Current (Ic):
15A
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Power Dissipation (Pd):
56W
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Turn?on Delay Time (Td(on)):
12ns
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Input Capacitance (Cies@Vce):
-
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Turn?on Switching Loss (Eon):
0.02mJ
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Total Gate Charge (Qg@Ic,Vge):
13.6nC
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Turn?off Delay Time (Td(off)):
76ns
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Pulsed Collector Current (Icm):
21A
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Turn?off Switching Loss (Eoff):
0.068mJ
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Diode Reverse Recovery Time (Trr):
21ns
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Collector-Emitter Breakdown Voltage (Vces):
600V
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Gate-Emitter Threshold Voltage (Vge(th)@Ic):
2.5V@15V,3A
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Package:
TO-252
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Manufacturer:
STMicroelectronics
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Part id:
116059