2SC3356-R25 数据手册
其他文档
2SC3356-R25 4 pages
2SC3356-R25 4 pages
技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: JSMSEMI 2SC3356-R25
- Transistor Type: -
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 100mA
- Power Dissipation (Pd): 200mW
- Transition Frequency (fT): 7GHz
- DC Current Gain (hFE@Ic,Vce): 120@20mA,10V
- Collector Cut-Off Current (Icbo): 1uA
- Collector-Emitter Breakdown Voltage (Vceo): 12V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): -
- Package: SOT-23-3L
- Manufacturer: JSMSEMI