IRFP450APBF 数据手册
其他文档
IRFP450APBF 11 pages
技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Infineon Technologies IRFP450APBF
- Power Dissipation (Pd): 190W
- Drain Source Voltage (Vdss): 500V
- Continuous Drain Current (Id): 14A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 400mΩ@10V,8.4A
- Package: TO-247AC-3
- Manufacturer: Infineon Technologies
- Operating Temperature: -55°C~+150°C@(Tj)
- Total Gate Charge (Qg@Vgs): 64nC@10V
- Input Capacitance (Ciss@Vds): 2038pF@25V