STP4N150 数据手册
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技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: STMicroelectronics STP4N150
- Power Dissipation (Pd): 160W
- Total Gate Charge (Qg@Vgs): 50nC@10V
- Drain Source Voltage (Vdss): 1.5kV
- Input Capacitance (Ciss@Vds): 1300pF@25V
- Continuous Drain Current (Id): 4A
- Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 7Ω@10V,2A
- Package: TO-220
- Manufacturer: STMicroelectronics