دیتاشیت RZE002P02TL
مشخصات دیتاشیت
| نام دیتاشیت |
RZE002P02TL
|
| حجم فایل |
53.712
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
5
|
مشخصات
-
RoHS:
true
-
Type:
P Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
ROHM Semicon RZE002P02TL
-
Power Dissipation (Pd):
150mW
-
Total Gate Charge (Qg@Vgs):
1.4nC@4.5V
-
Drain Source Voltage (Vdss):
20V
-
Input Capacitance (Ciss@Vds):
115pF@10V
-
Continuous Drain Current (Id):
200mA
-
Gate Threshold Voltage (Vgs(th)@Id):
1V@100uA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
1.2Ω@4.5V,200mA
-
Package:
EMT-3
-
Manufacturer:
ROHM Semicon
