دیتاشیت SVF23N50PN
مشخصات دیتاشیت
| نام دیتاشیت |
SVF23N50PN
|
| حجم فایل |
58.02
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
7
|
مشخصات
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
Hangzhou Silan Microelectronics SVF23N50PN
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
280W
-
Total Gate Charge (Qg@Vgs):
42.51nC@10V
-
Drain Source Voltage (Vdss):
500V
-
Input Capacitance (Ciss@Vds):
2.5958nF@25V
-
Continuous Drain Current (Id):
23A
-
Gate Threshold Voltage (Vgs(th)@Id):
4V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
10.1pF@25V
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
210mΩ@10V,11.5A
-
Package:
TO-3P-3
-
Manufacturer:
Hangzhou Silan Microelectronics
