MMDT5551 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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MMDT5551
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حجم فایل
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40.923
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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5
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
Jiangsu Changjing Electronics Technology Co., Ltd. MMDT5551
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Transistor Type:
2 NPN
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
200mA
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Power Dissipation (Pd):
200mW
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Transition Frequency (fT):
100MHz
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DC Current Gain (hFE@Ic,Vce):
100@10mA,5V
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Collector Cut-Off Current (Icbo):
50nA
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Collector-Emitter Breakdown Voltage (Vceo):
160V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
200mV@50mA,5mA
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Package:
SOT-323-6
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Manufacturer:
Jiangsu Changjing Electronics Technology Co., Ltd.
