دیتاشیت SI7113ADN-T1-GE3
مشخصات دیتاشیت
| نام دیتاشیت |
SI7113ADN-T1-GE3
|
| حجم فایل |
103.041
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
9
|
مشخصات فنی
-
RoHS:
true
-
Type:
P Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Vishay Intertech SI7113ADN-T1-GE3
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
27.8W
-
Total Gate Charge (Qg@Vgs):
16.5nC@10V
-
Drain Source Voltage (Vdss):
100V
-
Input Capacitance (Ciss@Vds):
515pF@50V
-
Continuous Drain Current (Id):
10.8A
-
Gate Threshold Voltage (Vgs(th)@Id):
2.6V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
132mΩ@3.8A,10V
-
Package:
PowerPAK1212-8
-
Manufacturer:
Vishay Intertech
