دیتاشیت SI7113ADN-T1-GE3
مشخصات دیتاشیت
| نام دیتاشیت | SI7113ADN-T1-GE3 |
|---|---|
| حجم فایل | 103.041 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 9 |
دانلود دیتاشیت SI7113ADN-T1-GE3 |
SI7113ADN-T1-GE3 Datasheet |
|---|
مشخصات
- RoHS: true
- Type: P Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Vishay Intertech SI7113ADN-T1-GE3
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 27.8W
- Total Gate Charge (Qg@Vgs): 16.5nC@10V
- Drain Source Voltage (Vdss): 100V
- Input Capacitance (Ciss@Vds): 515pF@50V
- Continuous Drain Current (Id): 10.8A
- Gate Threshold Voltage (Vgs(th)@Id): 2.6V@250uA
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 132mΩ@3.8A,10V
- Package: PowerPAK1212-8
- Manufacturer: Vishay Intertech
