2SD1898G-Q-AB3-R Datasheet

2SD1898G-Q-AB3-R

Datasheet specifications

Datasheet's name 2SD1898G-Q-AB3-R
File size 54.921 KB
File type pdf
Number of pages 3

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Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: UTC(Unisonic Tech) 2SD1898G-Q-AB3-R
  • Transistor Type: NPN
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 1A
  • Power Dissipation (Pd): 500mW
  • Transition Frequency (fT): 100MHz
  • DC Current Gain (hFE@Ic,Vce): 120@500mA,3V
  • Collector Cut-Off Current (Icbo): 1uA
  • Collector-Emitter Breakdown Voltage (Vceo): 80V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 150mV@500mA,20mA
  • Package: SOT-89-3
  • Manufacturer: UTC(Unisonic Tech)

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