SBCP56T3G Datasheet

SBCP56-16T3G

Datasheet specifications

Datasheet's name SBCP56-16T3G
File size 86.966 KB
File type pdf
Number of pages 6

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Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: onsemi SBCP56T3G
  • Transistor Type: NPN
  • Operating Temperature: -65°C~+150°C@(Tj)
  • Collector Current (Ic): 1A
  • Power Dissipation (Pd): 1.5W
  • Transition Frequency (fT): 130MHz
  • DC Current Gain (hFE@Ic,Vce): 40@150mA,2V
  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 80V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@500mA,50mA
  • Package: SOT-223
  • Manufacturer: onsemi

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