FDC6506P-VB 数据手册
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技术规格
- RoHS: true
- Type: 2 P-Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: VBsemi Elec FDC6506P-VB
- Power Dissipation (Pd): -
- Total Gate Charge (Qg@Vgs): -
- Drain Source Voltage (Vdss): 20V
- Input Capacitance (Ciss@Vds): -
- Continuous Drain Current (Id): 4A
- Gate Threshold Voltage (Vgs(th)@Id): -
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 75mΩ@4.5V,4A
- Package: TSOP-6-1.5mm
- Manufacturer: VBsemi Elec