PBSS5130T,215 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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PBSS5130T,215
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حجم فایل
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51.873
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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12
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
Nexperia PBSS5130T,215
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Transistor Type:
PNP
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
1A
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Power Dissipation (Pd):
480mW
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Transition Frequency (fT):
200MHz
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DC Current Gain (hFE@Ic,Vce):
260@500mA,2V
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Collector Cut-Off Current (Icbo):
100nA
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Collector-Emitter Breakdown Voltage (Vceo):
30V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
225mV@1A,50mA
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Package:
SOT-23(TO-236)
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Manufacturer:
Nexperia
