دیتاشیت MMBF170LT1G-VB
مشخصات دیتاشیت
| نام دیتاشیت |
MMBF170LT1G-VB
|
| حجم فایل |
66.73
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
-
RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
VBsemi Elec MMBF170LT1G-VB
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
300mW
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Total Gate Charge (Qg@Vgs):
400pC@4.5V
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Drain Source Voltage (Vdss):
60V
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Input Capacitance (Ciss@Vds):
25pF@25V
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Continuous Drain Current (Id):
250mA
-
Gate Threshold Voltage (Vgs(th)@Id):
2.5V@250uA
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Reverse Transfer Capacitance (Crss@Vds):
2pF@25V
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
2.8Ω@10V,200mA
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Package:
SOT-23-3
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Manufacturer:
VBsemi Elec
