SI2301 Datasheet

SI2301

Datasheet specifications

Datasheet's name SI2301
File size 58.104 KB
File type pdf
Number of pages 5

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Technical specifications

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: YONGYUTAI SI2301
  • Operating Temperature: +150°C@(Tj)
  • Power Dissipation (Pd): 700mW
  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 2.2A
  • Gate Threshold Voltage (Vgs(th)@Id): 0.62V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 90mΩ@4.5V,1.5A
  • Package: SOT-23(TO-236)
  • Manufacturer: YONGYUTAI
  • Total Gate Charge (Qg@Vgs): -
  • Input Capacitance (Ciss@Vds): 405pF@10V
  • Reverse Transfer Capacitance (Crss@Vds): 55pF@10V

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