SPD15P10P G دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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SPD15P10P G
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حجم فایل
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62.332
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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10
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مشخصات فنی
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RoHS:
true
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Type:
P Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Infineon Technologies SPD15P10P G
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Operating Temperature:
-55°C~+175°C@(Tj)
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Power Dissipation (Pd):
128W
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Total Gate Charge (Qg@Vgs):
48nC@10V
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Drain Source Voltage (Vdss):
100V
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Input Capacitance (Ciss@Vds):
1280pF@25V
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Continuous Drain Current (Id):
15A
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Gate Threshold Voltage (Vgs(th)@Id):
2.1V@1.54mA
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Reverse Transfer Capacitance (Crss@Vds):
-
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Drain Source On Resistance (RDS(on)@Vgs,Id):
240mΩ@10.6A,10V
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Package:
TO-252
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Manufacturer:
Infineon Technologies
