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80N10-VB Datasheet
Datasheet specifications
| Datasheet's name | 80N10-VB |
|---|---|
| File size | 74.85 KB |
| File type | |
| Number of pages | 7 |
Download Datasheet 80N10-VB |
Download Datasheet |
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Other documentations
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Technical specifications
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: VBsemi Elec 80N10-VB
- Power Dissipation (Pd): 250W
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 100A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 8.5mΩ@10V,30A
- Package: TO-220
- Manufacturer: VBsemi Elec