RU30L30M-VB دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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RU30L30M-VB
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حجم فایل
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70.185
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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8
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مشخصات فنی
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RoHS:
true
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Type:
P Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
VBsemi Elec RU30L30M-VB
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
52.1W
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Total Gate Charge (Qg@Vgs):
24.6nC@4.5V
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Drain Source Voltage (Vdss):
30V
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Input Capacitance (Ciss@Vds):
2.23nF@15V
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Continuous Drain Current (Id):
35A
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Gate Threshold Voltage (Vgs(th)@Id):
2.8V@250uA
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Reverse Transfer Capacitance (Crss@Vds):
322pF@15V
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Drain Source On Resistance (RDS(on)@Vgs,Id):
7.5mΩ@10V,14.4A
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Package:
QFN-8(3x3)
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Manufacturer:
VBsemi Elec
