US6M11TR دیتاشیت

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مشاهده دیتاشیت US6M11TR	دانلود دیتاشیت

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RoHS: true
Type: 1PCSN-Channel&1PCSP-Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: ROHM Semicon US6M11TR
Operating Temperature: +150°C@(Tch)
Power Dissipation (Pd): 1W
Total Gate Charge (Qg@Vgs): 1.8nC@4.5V
Drain Source Voltage (Vdss): null;12V
Input Capacitance (Ciss@Vds): 110pF@10V
Continuous Drain Current (Id): 1.5A;1.3A
Gate Threshold Voltage (Vgs(th)@Id): 1V@1mA
Reverse Transfer Capacitance (Crss@Vds): -
Drain Source On Resistance (RDS(on)@Vgs,Id): 130mΩ@4.5V,1.5A;190mΩ@4.5V,1.3A
Package: TUMT-6
Manufacturer: ROHM Semicon