PSMN3R0-30YL,115 数据手册
其他文档
未找到其他文档！
技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Nexperia PSMN3R0-30YL,115
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 81W
- Total Gate Charge (Qg@Vgs): 45.8nC@10V
- Drain Source Voltage (Vdss): 30V
- Input Capacitance (Ciss@Vds): 2822pF@12V
- Continuous Drain Current (Id): 100A
- Gate Threshold Voltage (Vgs(th)@Id): 2.15V@1mA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 3mΩ@10V,15A
- Package: SOT-669
- Manufacturer: Nexperia