PBSS8110Z,135 دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
PBSS8110Z,135
|
|
حجم فایل
|
51.873
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
15
|
مشخصات فنی
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
Nexperia PBSS8110Z,135
-
Transistor Type:
NPN
-
Operating Temperature:
+150°C@(Tj)
-
Collector Current (Ic):
1A
-
Power Dissipation (Pd):
1.4W
-
Transition Frequency (fT):
100MHz
-
DC Current Gain (hFE@Ic,Vce):
150@250mA,10V
-
Collector Cut-Off Current (Icbo):
100nA
-
Collector-Emitter Breakdown Voltage (Vceo):
100V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
200mV@1A,100mA
-
Package:
SOT-223-4
-
Manufacturer:
Nexperia
