4N65L-Q-TM3-T Datasheet

4N65L-Q-TM3-T

Datasheet specifications

Datasheet's name 4N65L-Q-TM3-T
File size 49.399 KB
File type pdf
Number of pages 9

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Technical specifications

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: UTC(Unisonic Tech) 4N65L-Q-TM3-T
  • Power Dissipation (Pd): 50W
  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 4A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.5Ω@10V,2.2A
  • Package: TO-251(IPAK)
  • Manufacturer: UTC(Unisonic Tech)

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