دیتاشیت 2SB1132-R
مشخصات دیتاشیت
| نام دیتاشیت |
2SB1132-R
|
| حجم فایل |
65.011
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
4
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
KEXIN 2SB1132-R
-
Transistor Type:
-
-
Operating Temperature:
+150°C@(Tj)
-
Collector Current (Ic):
1A
-
Power Dissipation (Pd):
500mW
-
Transition Frequency (fT):
150MHz
-
DC Current Gain (hFE@Ic,Vce):
82@100mA,3V
-
Collector Cut-Off Current (Icbo):
500nA
-
Collector-Emitter Breakdown Voltage (Vceo):
32V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
200mV@500mA,50mA
-
Package:
SOT-89-4
-
Manufacturer:
KEXIN
