2SB1132-R 数据手册
其他文档
2SB1132-R 4 pages
技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: KEXIN 2SB1132-R
- Transistor Type: -
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 1A
- Power Dissipation (Pd): 500mW
- Transition Frequency (fT): 150MHz
- DC Current Gain (hFE@Ic,Vce): 82@100mA,3V
- Collector Cut-Off Current (Icbo): 500nA
- Collector-Emitter Breakdown Voltage (Vceo): 32V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 200mV@500mA,50mA
- Package: SOT-89-4
- Manufacturer: KEXIN