دیتاشیت BSD214SN H6327
مشخصات دیتاشیت
نام دیتاشیت |
BSD214SN H6327
|
حجم فایل |
75.317
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
9
|
مشخصات
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RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Infineon Technologies BSD214SN H6327
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
500mW
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Total Gate Charge (Qg@Vgs):
0.8nC@5V
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Drain Source Voltage (Vdss):
20V
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Input Capacitance (Ciss@Vds):
143pF@10V
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Continuous Drain Current (Id):
1.5A
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Gate Threshold Voltage (Vgs(th)@Id):
1.2V@3.7uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
140mΩ@4.5V,1.5A
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Package:
SOT-363-6
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Manufacturer:
Infineon Technologies