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2N7000-TA Datasheet
Datasheet specifications
| Datasheet's name | 2N7000-TA |
|---|---|
| File size | 61.948 KB |
| File type | |
| Number of pages | 5 |
Download Datasheet 2N7000-TA |
Download Datasheet |
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Technical specifications
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Jiangsu Changjing Electronics Technology Co., Ltd. 2N7000-TA
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 0.625W
- Total Gate Charge (Qg@Vgs): -
- Drain Source Voltage (Vdss): 60V
- Input Capacitance (Ciss@Vds): 60pF@25V
- Continuous Drain Current (Id): 0.2A
- Gate Threshold Voltage (Vgs(th)@Id): 3V@1mA
- Reverse Transfer Capacitance (Crss@Vds): 5pF@25V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 5Ω@10V,500mA
- Package: TO-92
- Manufacturer: Jiangsu Changjing Electronics Technology Co., Ltd.