دیتاشیت 2N7000-TA
مشخصات دیتاشیت
نام دیتاشیت |
2N7000-TA
|
حجم فایل |
61.948
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
5
|
مشخصات
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RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Jiangsu Changjing Electronics Technology Co., Ltd. 2N7000-TA
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
0.625W
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Total Gate Charge (Qg@Vgs):
-
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Drain Source Voltage (Vdss):
60V
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Input Capacitance (Ciss@Vds):
60pF@25V
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Continuous Drain Current (Id):
0.2A
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Gate Threshold Voltage (Vgs(th)@Id):
3V@1mA
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Reverse Transfer Capacitance (Crss@Vds):
5pF@25V
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Drain Source On Resistance (RDS(on)@Vgs,Id):
5Ω@10V,500mA
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Package:
TO-92
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Manufacturer:
Jiangsu Changjing Electronics Technology Co., Ltd.