2SD882L-P-T60-K Datasheet

2SD882L-P-T60-K

Datasheet specifications

Datasheet's name 2SD882L-P-T60-K
File size 63.349 KB
File type pdf
Number of pages 5

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Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: UTC(Unisonic Tech) 2SD882L-P-T60-K
  • Transistor Type: NPN
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 3A
  • Power Dissipation (Pd): 1W
  • Transition Frequency (fT): 80MHz
  • DC Current Gain (hFE@Ic,Vce): 160@1A,2V
  • Collector Cut-Off Current (Icbo): 1uA
  • Collector-Emitter Breakdown Voltage (Vceo): 30V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 300mV@2A,200mA
  • Package: TO-126
  • Manufacturer: UTC(Unisonic Tech)

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