MJD340-13 Datasheet

MJD340-13

Datasheet specifications

Datasheet's name MJD340-13
File size 67.21 KB
File type pdf
Number of pages 7

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Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: Diodes Incorporated MJD340-13
  • Transistor Type: NPN
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Collector Current (Ic): 500mA
  • Power Dissipation (Pd): 15W
  • Transition Frequency (fT): 10MHz
  • DC Current Gain (hFE@Ic,Vce): 30@50mA,10V
  • Collector Cut-Off Current (Icbo): 100uA
  • Collector-Emitter Breakdown Voltage (Vceo): 300V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@100mA,10mA
  • Package: DPAK-3
  • Manufacturer: Diodes Incorporated

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