دیتاشیت PHE13003C,412
مشخصات دیتاشیت
| نام دیتاشیت |
PHE13003C,412
|
| حجم فایل |
46.52
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
12
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
WeEn Semiconductors PHE13003C,412
-
Transistor Type:
NPN
-
Operating Temperature:
+150°C@(Tj)
-
Collector Current (Ic):
1.5A
-
Power Dissipation (Pd):
2.1W
-
Transition Frequency (fT):
-
-
DC Current Gain (hFE@Ic,Vce):
5@1A,2V
-
Collector Cut-Off Current (Icbo):
100uA
-
Collector-Emitter Breakdown Voltage (Vceo):
400V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
1.5V@1.5A,500mA
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Package:
TO-92-3
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Manufacturer:
WeEn Semiconductors
