PHE13003C,412 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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PHE13003C,412
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حجم فایل
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46.52
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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12
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
WeEn Semiconductors PHE13003C,412
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Transistor Type:
NPN
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
1.5A
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Power Dissipation (Pd):
2.1W
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Transition Frequency (fT):
-
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DC Current Gain (hFE@Ic,Vce):
5@1A,2V
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Collector Cut-Off Current (Icbo):
100uA
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Collector-Emitter Breakdown Voltage (Vceo):
400V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
1.5V@1.5A,500mA
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Package:
TO-92-3
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Manufacturer:
WeEn Semiconductors
