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PSMN0R9-30YLDX Datasheet
Datasheet specifications
| Datasheet's name | PSMN0R9-30YLDX |
|---|---|
| File size | 76.771 KB |
| File type | |
| Number of pages | 13 |
Download Datasheet PSMN0R9-30YLDX |
Download Datasheet |
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Other documentations
No other documentation was found!
Technical specifications
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Nexperia PSMN0R9-30YLDX
- Power Dissipation (Pd): 291W
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 300A
- Gate Threshold Voltage (Vgs(th)@Id): 2.2V@1mA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 0.87mΩ@10V,25A
- Package: LFPAK-56-4
- Manufacturer: Nexperia
