JCS4N60RB 数据手册
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技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Jilin Sino-Microelectronics JCS4N60RB
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 165.56W
- Total Gate Charge (Qg@Vgs): 13.3nC@10V
- Drain Source Voltage (Vdss): 600V
- Input Capacitance (Ciss@Vds): 702pF@25V
- Continuous Drain Current (Id): 4A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 2.69pF@25V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1.7Ω@10V,2A
- Package: TO-252
- Manufacturer: Jilin Sino-Microelectronics
