دیتاشیت JCS4N60RB
مشخصات دیتاشیت
| نام دیتاشیت |
JCS4N60RB
|
| حجم فایل |
89.225
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
16
|
مشخصات
-
RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Jilin Sino-Microelectronics JCS4N60RB
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
165.56W
-
Total Gate Charge (Qg@Vgs):
13.3nC@10V
-
Drain Source Voltage (Vdss):
600V
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Input Capacitance (Ciss@Vds):
702pF@25V
-
Continuous Drain Current (Id):
4A
-
Gate Threshold Voltage (Vgs(th)@Id):
4V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
2.69pF@25V
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
1.7Ω@10V,2A
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Package:
TO-252
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Manufacturer:
Jilin Sino-Microelectronics
