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BSZ100N06LS3G Datasheet
Datasheet specifications
| Datasheet's name | BSZ100N06LS3G |
|---|---|
| File size | 60.924 KB |
| File type | |
| Number of pages | 9 |
Download Datasheet BSZ100N06LS3G |
Download Datasheet |
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Other documentations
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Technical specifications
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Infineon Technologies BSZ100N06LS3G
- Power Dissipation (Pd): 2.1W
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 11A
- Gate Threshold Voltage (Vgs(th)@Id): 2.2V@23uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 10mΩ@10V,20A
- Package: TSDSON-8(3.3x3.3)
- Manufacturer: Infineon Technologies