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2N60G-CB-AA3-R Datasheet
Datasheet specifications
| Datasheet's name | 2N60G-CB-AA3-R |
|---|---|
| File size | 48.94 KB |
| File type | |
| Number of pages | 7 |
Download Datasheet 2N60G-CB-AA3-R |
Download Datasheet |
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Other documentations
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Technical specifications
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: UTC(Unisonic Tech) 2N60G-CB-AA3-R
- Power Dissipation (Pd): 44W
- Drain Source Voltage (Vdss): 600V
- Continuous Drain Current (Id): 2A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 5Ω@10V,1A
- Package: SOT-223
- Manufacturer: UTC(Unisonic Tech)