MMBT8550D Datasheet

MMBT8550D

Datasheet specifications

Datasheet's name MMBT8550D
File size 75.686 KB
File type pdf
Number of pages 2

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Other documentations

MMBT8550D 3 pages

MMBT8550D 4 pages

Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: Agertech MMBT8550D
  • Transistor Type: PNP
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 600mA
  • Power Dissipation (Pd): 350mW
  • Transition Frequency (fT): 100MHz
  • DC Current Gain (hFE@Ic,Vce): 160@100mA,1V
  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 25V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@500mA,50mA
  • Package: SOT-23(TO-236)
  • Manufacturer: Agertech

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