دیتاشیت 2N7002K-T1-GE3
مشخصات دیتاشیت
| نام دیتاشیت |
2N7002K-T1-GE3
|
| حجم فایل |
70.579
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
9
|
مشخصات
-
RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Vishay Intertech 2N7002K-T1-GE3
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
350mW
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Total Gate Charge (Qg@Vgs):
0.6nC@4.5V
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Drain Source Voltage (Vdss):
60V
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Input Capacitance (Ciss@Vds):
30pF@25V
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Continuous Drain Current (Id):
300mA
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Gate Threshold Voltage (Vgs(th)@Id):
2.5V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
2Ω@10V,500mA
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Package:
SOT-23
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Manufacturer:
Vishay Intertech
