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20N03-VB Datasheet
Datasheet specifications
| Datasheet's name | 20N03-VB |
|---|---|
| File size | 74.075 KB |
| File type | |
| Number of pages | 8 |
Download Datasheet 20N03-VB |
Download Datasheet |
|---|
Other documentations
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Technical specifications
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: VBsemi Elec 20N03-VB
- Power Dissipation (Pd): 3.25W
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 21.8A
- Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 7mΩ@10V,21.8A
- Package: TO-252
- Manufacturer: VBsemi Elec
