FQPF4N60-VB 数据手册
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技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: VBsemi Elec FQPF4N60-VB
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 4.5A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 2.1Ω@10V,4.5A
- Package: TO-220
- Manufacturer: VBsemi Elec
