FGD3325G2-F085V دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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FGD3325G2-F085V
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حجم فایل
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50.018
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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11
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مشخصات فنی
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RoHS:
true
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Type:
-
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Category:
Triode/MOS Tube/Transistor/IGBTs
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Datasheet:
onsemi FGD3325G2-F085V
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Operating Temperature:
-55°C~+175°C@(Tj)
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Collector Current (Ic):
41A
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Power Dissipation (Pd):
150W
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Turn?on Delay Time (Td(on)):
800ns
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Input Capacitance (Cies@Vce):
-
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Turn?on Switching Loss (Eon):
-
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Total Gate Charge (Qg@Ic,Vge):
21nC
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Turn?off Delay Time (Td(off)):
5.1us
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Diode Reverse Recovery Time (Trr):
1.2us
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Collector-Emitter Breakdown Voltage (Vces):
250V
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Gate-Emitter Threshold Voltage (Vge(th)@Ic):
1.25V@4V,6A
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Package:
DPAK-3
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Manufacturer:
onsemi
