دیتاشیت KTB778-O-U/P
مشخصات دیتاشیت
| نام دیتاشیت |
KTB778-O-U/P
|
| حجم فایل |
68.245
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
2
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
KEC Semicon KTB778-O-U/P
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Transistor Type:
-
-
Operating Temperature:
+150°C@(Tj)
-
Collector Current (Ic):
10A
-
Power Dissipation (Pd):
80W
-
Transition Frequency (fT):
10MHz
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DC Current Gain (hFE@Ic,Vce):
55@1A,5V
-
Collector Cut-Off Current (Icbo):
10uA
-
Collector-Emitter Breakdown Voltage (Vceo):
120V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
2.5V@5A,500mA
-
Package:
TO-3P
-
Manufacturer:
KEC Semicon
