دیتاشیت HY1904B
مشخصات دیتاشیت
| نام دیتاشیت |
HY1904B
|
| حجم فایل |
70.229
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
11
|
مشخصات
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
HUAYI HY1904B
-
Operating Temperature:
-55°C~+175°C@(Tj)
-
Power Dissipation (Pd):
100W
-
Total Gate Charge (Qg@Vgs):
52nC@10V
-
Drain Source Voltage (Vdss):
40V
-
Input Capacitance (Ciss@Vds):
2.274nF@25V
-
Continuous Drain Current (Id):
90A
-
Gate Threshold Voltage (Vgs(th)@Id):
1.7V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
70pF@25V
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
4.7mΩ@10V,45A
-
Package:
TO-263
-
Manufacturer:
HUAYI
