دیتاشیت WPM2015-MS
مشخصات دیتاشیت
| نام دیتاشیت |
WPM2015-MS
|
| حجم فایل |
31.44
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
5
|
مشخصات
-
RoHS:
true
-
Type:
P Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
MSKSEMI WPM2015-MS
-
Operating Temperature:
+150°C@(Tj)
-
Power Dissipation (Pd):
400mW
-
Total Gate Charge (Qg@Vgs):
5.5nC@4.5V
-
Drain Source Voltage (Vdss):
20V
-
Input Capacitance (Ciss@Vds):
405pF@10V
-
Continuous Drain Current (Id):
3A
-
Gate Threshold Voltage (Vgs(th)@Id):
1V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
55pF@10V
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
80mΩ@4.5V,2.8A
-
Package:
SOT-23-3
-
Manufacturer:
MSKSEMI
