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BCP53-10HX Datasheet
Datasheet specifications
| Datasheet's name | BCP53HX |
|---|---|
| File size | 56.3 KB |
| File type | |
| Number of pages | 16 |
Download Datasheet BCP53HX |
Download Datasheet |
|---|
Other documentations
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: Nexperia BCP53-10HX
- Transistor Type: PNP
- Operating Temperature: +175°C@(Tj)
- Collector Current (Ic): 1A
- Power Dissipation (Pd): 2.2W
- Transition Frequency (fT): 140MHz
- DC Current Gain (hFE@Ic,Vce): 63@150mA,2V
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 80V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@500mA,50mA
- Package: SOT-223-4
- Manufacturer: Nexperia
