BCX52,115 Datasheet

BCX52-16,135

Datasheet specifications

Datasheet's name BCX52-16,135
File size 54.069 KB
File type pdf
Number of pages 22

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Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: Nexperia BCX52,115
  • Transistor Type: PNP
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 1A
  • Power Dissipation (Pd): 500mW
  • Transition Frequency (fT): 145MHz
  • DC Current Gain (hFE@Ic,Vce): 63@150mA,2V
  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 60V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@500mA,50mA
  • Package: SOT-89
  • Manufacturer: Nexperia

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