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2N7002KG-AE2-R Datasheet
Datasheet specifications
| Datasheet's name | 2N7002KG-AE2-R |
|---|---|
| File size | 54.43 KB |
| File type | |
| Number of pages | 6 |
Download Datasheet 2N7002KG-AE2-R |
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Other documentations
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Technical specifications
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: UTC(Unisonic Tech) 2N7002KG-AE2-R
- Power Dissipation (Pd): 350mW
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 300mA
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@1mA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 2Ω@10V,300mA
- Package: SOT-23-3
- Manufacturer: UTC(Unisonic Tech)