دیتاشیت 2N5401-TA
مشخصات دیتاشیت
نام دیتاشیت |
2N5401-TA
|
حجم فایل |
80.751
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
4
|
مشخصات
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
Jiangsu Changjing Electronics Technology Co., Ltd. 2N5401-TA
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Transistor Type:
PNP
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
600mA
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Power Dissipation (Pd):
625mW
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Transition Frequency (fT):
100MHz
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DC Current Gain (hFE@Ic,Vce):
150@10mA,5V
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Collector Cut-Off Current (Icbo):
50nA
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Collector-Emitter Breakdown Voltage (Vceo):
150V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
500mV@50mA,5mA
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Package:
TO-92
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Manufacturer:
Jiangsu Changjing Electronics Technology Co., Ltd.